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II-VI semiconductor compounds are combinations of two atoms, one of the alkaline earth metals (group 2 of the Periodic table) or one of the group 12 elements (group 12 of the periodic table) and one atom of the Chalcogens (group 16 of the periodic table). These semiconductors crystallize either in the zincblende lattice structure or the wurtzite crystal structure. These semiconductors show usually big band gaps. That's why they are popular for short wavelength applications in optoelectronics. == Fabrication == II-VI semiconductor compounds are produced with epitaxy methods like most semiconductor compounds .〔16. Wide-Bandgap II–VI Semiconductors: Growth and Properties, publisher=Springer, (link )〕 The substrate plays an important role for all fabrication methods. III-V semiconductor compounds like Gallium Arsenide are widely used. This method is called heteroepitaxy. Best growth results are obtained by substrates made from the same materials (homoepitaxy). Growing substrates from ZnO in good quality for example is very expensive therefore rarely applied. Cheap substrates like GaAs result in stronger tensions between substrate and growth layer which usually result in lower optoelectronic properties. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「II-VI semiconductor compound」の詳細全文を読む スポンサード リンク
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